| PART |
Description |
Maker |
| K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7P801811B-HC27 K7P801811B-HC30 K7P801811B-HC25 K7 |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
256Kx36 & 512Kx18 Synchronous Pipelined SRAM 256Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7A803609A K7A801809A |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7N801809A |
512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7A803609A K7A801809A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet
512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| KM736V890 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
